AP30N06 NMOS TO252 N沟道场效应管 60V

100% EAS Guaranteed

Green Device Available

Super Low Gate Charge

Excellent CdV/dt effect decline

Advanced high cell density Trench
technology

The
is the high cell density trenched
N
-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the
synchronous buck
converter applications.
The
meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved
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